AlGaN/GaN MODFET Device for High Temperature Applications

The objective of this paper is to investigate the feasibility and explore the potential of GaN-based devices for high temperature applications. An analytical temperature model based on modified charge control model is developed for the proposed device. The major tasks of this paper include the establishment of the compact model including the thermal effects and the validation of the analytical results and experimental data with numerical simulator. Device reliability and high temperature device operation are investigated. The temperature effect on transport characteristics predicts the device behavior in extreme environments. The analysis of the proposed model shows that the device demonstrates significant degradation at elevated temperatures. Preliminary results from the temperature model and the measured data at room temperature indicate that the device could survive in extreme environments. The calculated values of the critical parameters suggest that the proposed device can operate in the GHz range for temperature up to 600 K. So far, extensive investigations have been conducted on the potential of AlGaN/GaN MODFETs for high temperature applications. But the state-of-the-art of GaN based devices indicate exponentially increasing device failure rate at elevated temperatures.